DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
نویسندگان
چکیده
0167-9317/$ see front matter 2013 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2013.02.076 ⇑ Corresponding author. Tel.: +39 0984 494766. E-mail address: [email protected] (F. Crupi). This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive random access memory cells. It is shown that the devices exhibit a current on–off window up to 70 which is almost independent of the temperature in the range 30–180 C. The experimental current–voltage curves in both resistance states are well reproduced by the quantum point contact model. LFN spectrum is typically characterized by 1/f noise in the low resistance state (LRS), while individual lorentzian components are often observed superimposed to the background 1/f noise in the high resistance state (HRS). Both LFN types are ascribed to defects fluctuating between a neutral and a charged state. The LFN level normalized to the square of the DC current in HRS is about two orders of magnitude higher than the corresponding value for LRS. The higher normalized LFN observed in HRS is ascribed to the smaller cross-section area of the conductive filament and to the stronger effect of the potential barrier modulation induced by a trapped electron. The normalized LFN is independent of the temperature for both resistance states as well as of the bias voltage in LRS, while it decreases with the bias in HRS, which is well correlated to the corresponding resistance decrease. 2013 Elsevier B.V. All rights reserved.
منابع مشابه
Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment
The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2 thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity cha...
متن کاملEvolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth und...
متن کاملStatistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switchin...
متن کاملAnalysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO2/Pt RRAM device...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2013